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Transistor: N-MOSFET x2; TrenchFET®; unipolar; 30V; 610mA; Idm: 2A


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Product information

Item number:
     5070-SI1036X-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI1036X-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SC89;SOT563
Drain-source voltage: 30V
Drain current: 610mA
On-state resistance: 1.1Ω
Type of transistor: N-MOSFET x2
Power dissipation: 0.22W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 2nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: 2A
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