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Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A


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Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -3.5A; Idm: -20A
Item number:
     5070-SI2305CDS-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SI2305CDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: VISHAY
Mounting: SMD
Case: SOT23
Drain-source voltage: -8V
Drain current: -3.5A
On-state resistance: 65mΩ
Type of transistor: P-MOSFET
Power dissipation: 1.1W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±8V
Pulsed drain current: -20A
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