Transistor: P-MOSFET; TrenchFET®; unipolar; -8V; -9A; Idm: -15A; 13W purchased inexpensively from Mercateo

Product information

Item number:
5070-SIB417EDK-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIB417EDK-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
power transistor

Manufacturer: VISHAY
Mounting: SMD
Drain-source voltage: -8V
Drain current: -9A
On-state resistance: 0.25Ω
Type of transistor: P-MOSFET
Power dissipation: 13W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 12nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±5V
Pulsed drain current: -15A

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