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Transistor: N-MOSFET; unipolar; 600V; 51A; Idm: 268A; 520W


Quantity:  piece  
Product information

Item number:
     5070-SIHB22N60AE-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB22N60AE-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: D2PAK;TO263
Drain-source voltage: 600V
Drain current: 51A
On-state resistance: 30mΩ
Type of transistor: N-MOSFET
Power dissipation: 520W
Polarisation: unipolar
Kind of package: tube
Gate charge: 443nC
Kind of channel: enhanced
Gate-source voltage: ±30V
Pulsed drain current: 268A
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