Transistor: N-MOSFET; TrenchFET®; unipolar; 80V; 302A; Idm: 500A purchased inexpensively from Mercateo

Product information

Item number:
5070-SIJH5800E-T1-GE3

Manufacturer:
Vishay

Manufacturer no.:
SIJH5800E-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 8x8L
Drain-source voltage: 80V
Drain current: 302A
On-state resistance: 1.58mΩ
Type of transistor: N-MOSFET
Power dissipation: 333W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 155nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 500A

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Other search terms: SMD transistors, Transistor, Transistors