Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 60A; Idm: 150A; 57W purchased inexpensively from Mercateo

Product information

Item number:
5070-SIR186DP-T1-RE3

Manufacturer:
Vishay

Manufacturer no.:
SIR186DP-T1-RE3

EAN/GTIN:
n/a

Search terms:

Power transistor
MOSFET
MOSFET transistor
SMD transistor

Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 60A
On-state resistance: 7.8mΩ
Type of transistor: N-MOSFET
Power dissipation: 57W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 37nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 150A

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Other search terms: SMD transistors, Transistor, Transistors