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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 186A; Idm: 400A


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Product information

Item number:
     5070-SIR626LDP-T1-RE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIR626LDP-T1-RE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® SO8
Drain-source voltage: 60V
Drain current: 186A
On-state resistance: 2.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 104W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 135nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 400A
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