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Transistor: N-MOSFET; TrenchFET®; unipolar; 60V; 40A; Idm: 100A; 52W


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Product information

Item number:
     5070-SIS862DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SIS862DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Field effect transistor
Field effect transistors
Power transistor
MOSFET
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 60V
Drain current: 40A
On-state resistance: 12.5mΩ
Type of transistor: N-MOSFET
Power dissipation: 52W
Polarisation: unipolar
Kind of package: tape;reel
Gate charge: 20.8nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 100A
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