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Transistor: N-MOSFET; TrenchFET®; unipolar; 20V; 17.6A; Idm: 60A; 2W


Quantity:  piece  
Product information

Item number:
     5070-SISH108DN-T1-GE3
Manufacturer:
     Vishay
Manufacturer no.:
     SISH108DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Manufacturer: VISHAY
Mounting: SMD
Case: PowerPAK® 1212-8
Drain-source voltage: 20V
Drain current: 17.6A
On-state resistance: 6.1mΩ
Type of transistor: N-MOSFET
Power dissipation: 2W
Polarisation: unipolar
Kind of package: tape;reel
Unit price: No
Gate charge: 30nC
Technology: TrenchFET®
Kind of channel: enhanced
Gate-source voltage: ±16V
Pulsed drain current: 60A
Other search terms: Transistors
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