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Transistor: P-MOSFET; unipolar; -60V; -60A; Idm: -120A; 100W; DPAK


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Product information

Item number:
     5070-TJ60S06M3L
Manufacturer:
     Toshiba
Manufacturer no.:
     TJ60S06M3L(T6L1,NQ
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Manufacturer: TOSHIBA
Mounting: SMD
Case: DPAK
Drain-source voltage: -60V
Drain current: -60A
On-state resistance: 14.5mΩ
Type of transistor: P-MOSFET
Power dissipation: 100W
Polarisation: unipolar
Kind of package: tape;reel
Features of semiconductor devices: ESD protected gate
Gate charge: 156nC
Kind of channel: enhanced
Gate-source voltage: -20...10V
Pulsed drain current: -120A
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