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INFINEON BSC123N10LSGATMA1 Rds(on) Test Voltage 10 V Drain Source On State


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-1775470
Manufacturer:
     Infineon
Manufacturer no.:
     BSC123N10LSGATMA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.01 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 71 A Operating Temperature Max 150 °C Transistor Case Style PG-TDSON Drain Source Voltage Vds 100 V Power Dissipation 114 W Qualification - Gate Source Threshold Voltage Max 1.85 V SVHC No SVHC (23-Jan-2024)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, BSC123N10LSGATMA1, 1775470, 177-5470
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