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INFINEON IPP200N15N3GXKSA1 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-1775651
Manufacturer:
     Infineon
Manufacturer no.:
     IPP200N15N3GXKSA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.016 ohm Product Range - MSL - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 50 A Operating Temperature Max 175 °C Transistor Case Style TO-220 Drain Source Voltage Vds 150 V Power Dissipation 150 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: Transistor, Transistors, power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, IPP200N15N3GXKSA1, 1775651, 177-5651
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6546 Yorkshire LS12
2358
1
£ 2.00*
from £ 1.11*
£ 2.57*
1
£ 7.70*
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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