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VISHAY SIHB22N60E-GE3 MOSFET, N CH, 600V, 21A, D2PAK


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2079772
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB22N60E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.15 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 600 V Power Dissipation 227 W Qualification - Gate Source Threshold Voltage Max 2 V SVHC Lead (19-Jan-2021)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB22N60E-GE3, 2079772, 207-9772
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