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VISHAY SI7852DP-T1-GE3 MOSFET, N-CH, 80V, PPAK-SO8


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2283668
Manufacturer:
     Vishay
Manufacturer no.:
     SI7852DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0135 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 12.5 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 80 V Power Dissipation 1.9 W Qualification - Gate Source Threshold Voltage Max 2 V SVHC No SVHC (10-Jun-2022)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI7852DP-T1-GE3, 2283668, 228-3668
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