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INFINEON BSB165N15NZ3GXUMA1 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2480771
Manufacturer:
     Infineon
Manufacturer no.:
     BSB165N15NZ3GXUMA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0131 ohm Product Range - MSL MSL 3 - 168 hours No. of Pins 2 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 45 A Operating Temperature Max 150 °C Transistor Case Style WDSON Drain Source Voltage Vds 150 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, BSB165N15NZ3GXUMA1, 2480771, 248-0771
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