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INFINEON SPB21N50C3ATMA1 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2480878
Manufacturer:
     Infineon
Manufacturer no.:
     SPB21N50C3ATMA1
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.16 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 500 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: 500v mosfet, power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, INFINEON, SPB21N50C3ATMA1, 2480878, 248-0878
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