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VISHAY SI2338DS-T1-GE3 Rds(on) Test Voltage 10 V Drain Source On State

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Item number:
6546-2679676

Manufacturer:
Vishay

Manufacturer no.:
SI2338DS-T1-GE3

EAN/GTIN:
n/a

Search terms:

Power transistor
power transistor

Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.023 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 6 A Operating Temperature Max 150 °C Transistor Case Style SOT-23 Drain Source Voltage Vds 30 V Power Dissipation 2.5 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC No SVHC (23-Jan-2024)

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Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI2338DS-T1-GE3, 2679676, 267-9676

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Order quantity	Net	Gross	Unit

from 3000 pieces	£ 0.186*	£ 0.2232	per piece
from 6000 pieces	£ 0.182*	£ 0.2184	per piece
from 9000 pieces	£ 0.16*	£ 0.192	per piece
from 15000 pieces	£ 0.156*	£ 0.1872	per piece
from 30000 pieces	£ 0.154*	£ 0.1848	per piece
from 1500000 pieces	£ 0.149*	£ 0.1788	per piece