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VISHAY SUD08P06-155L-GE3 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2679715
Manufacturer:
     Vishay
Manufacturer no.:
     SUD08P06-155L-GE3
EAN/GTIN:
     n/a
Search terms:
IGBT
Power MOSFET
Power transistor
MOSFET
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.125 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 8.2 A Operating Temperature Max 150 °C Transistor Case Style TO-252 (DPAK) Drain Source Voltage Vds 60 V Power Dissipation 20.8 W Qualification - Gate Source Threshold Voltage Max 2 V SVHC No SVHC (20-Jun-2016)
Other search terms: MOSFET transistor, Transistor, Transistors, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SUD08P06-155L-GE3, 2679715, 267-9715
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2000
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£ 0.333*
6546 Yorkshire LS12
out of stock
2000
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from £ 0.333*
£ 0.344*
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Stock level: 6546 Yorkshire LS12
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