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ROHM RQ3E100GNTB MOSFET, N-CH, 30V, 21A, HSMT-8


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2706632
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     RQ3E100GNTB
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0089 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Transistor Case Style HSMT Drain Source Voltage Vds 30 V Power Dissipation 15 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC No SVHC (23-Jan-2024)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, ROHM, RQ3E100GNTB, 2706632, 270-6632
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