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VISHAY SQJA20EP-T1_GE3 MOSFET, N-CH, AEC-Q101, 200V, 22.5A


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2833883
Manufacturer:
     Vishay
Manufacturer no.:
     SQJA20EP-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.041 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 22.5 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 200 V Power Dissipation 68 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 3 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQJA20EP-T1_GE3, 2833883, 283-3883
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