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VISHAY SI4850BDY-T1-GE3 MOSFET, N-CH, 60V, 11.3A, SOIC


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2846625
Manufacturer:
     Vishay
Manufacturer no.:
     SI4850BDY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.016 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 11.3 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 60 V Power Dissipation 4.5 W Qualification - Gate Source Threshold Voltage Max 2.8 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI4850BDY-T1-GE3, 2846625, 284-6625
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