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MICROCHIP VP2110K1-G Rds(on) Test Voltage 10 V Drain Source On State Resistance


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2857808
Manufacturer:
     Microchip Technology
Manufacturer no.:
     VP2110K1-G
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 9 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 120 mA Operating Temperature Max 150 °C Transistor Case Style SOT-23 Drain Source Voltage Vds 100 V Power Dissipation 360 mW Qualification - Gate Source Threshold Voltage Max 3.5 V SVHC No SVHC (15-Jan-2018)
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, MICROCHIP, VP2110K1-G, 2857808, 285-7808
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6546 Yorkshire LS12
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