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VISHAY SQA442EJ-T1_GE3 Rds(on) Test Voltage 10 V Drain Source On State


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2886987
Manufacturer:
     Vishay
Manufacturer no.:
     SQA442EJ-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power MOSFET
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.026 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 6 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 9 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK SC-70 Drain Source Voltage Vds 60 V Power Dissipation 13.6 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised
Other search terms: power mosfet, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQA442EJ-T1_GE3, 2886987, 288-6987
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from £ 0.157*
  
Price is valid from 2,500,000 pieces
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£ 0.4248
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£ 0.21
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£ 0.1956
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£ 0.1884
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