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VISHAY SI7113ADN-T1-GE3 MOSFET, P-CH, -100V, -10.8A, 150DEG C


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2932889
Manufacturer:
     Vishay
Manufacturer no.:
     SI7113ADN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.11 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 10.8 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 100 V Power Dissipation 27.8 W Qualification - Gate Source Threshold Voltage Max 2.6 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI7113ADN-T1-GE3, 2932889, 293-2889
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