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ROHM SCT3017ALGC11 MOSFET, N-CH, 650V, 118A, 175DEG C, 427W


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-2947063
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     SCT3017ALGC11
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 18 V Drain Source On State Resistance 0.017 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins MOSFET Module Configuration Single Channel Type N Channel Continuous Drain Current Id 118 A Operating Temperature Max 175 °C Transistor Case Style TO-247N Drain Source Voltage Vds 650 V Power Dissipation 427 W Gate Source Threshold Voltage Max 5.6 V SVHC Lead (23-Jan-2024)
Other search terms: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, SCT3017ALGC11, 2947063, 294-7063
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