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ONSEMI FCMT199N60 MOSFET, N-CH, 20.2A, 600V, PQFN


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3004008
Manufacturer:
     onsemi
Manufacturer no.:
     FCMT199N60
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.17 ohm Product Range SuperFET II MSL MSL 1 - Unlimited No. of Pins 4 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 20.2 A Operating Temperature Max 150 °C Transistor Case Style PQFN Drain Source Voltage Vds 600 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 3.5 V SVHC No SVHC (15-Jan-2018)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, ONSEMI, FCMT199N60, 3004008, 300-4008
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