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VISHAY SISH114ADN-T1-GE3 MOSFET, N-CH, 30V, 35A, 150DEG C, 39W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3019129
Manufacturer:
     Vishay
Manufacturer no.:
     SISH114ADN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0062 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 35 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 39 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC To Be Advised
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISH114ADN-T1-GE3, 3019129, 301-9129
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6546 Yorkshire LS12
4601
£ 2.00*
from £ 0.236*
£ 0.759*
£ 7.70*
from £ 0.34*
£ 0.80*
Prices: 6546 Yorkshire LS12
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Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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