| |
|
| Item number: 6546-3019137 Manufacturer no.: SISS06DN-T1-GE3 EAN/GTIN: n/a |
| |
|
| | |
| Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.00115 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 172.6 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 65.7 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC To Be Advised |
| | |
| | | |
| Other search terms: SMD transistors, Transistor, Transistors, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS06DN-T1-GE3, 3019137, 301-9137 |
| | |
| |