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VISHAY SISS06DN-T1-GE3 MOSFET, N-CH, 30V, 172.6A, 150DEG C


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3019137
Manufacturer:
     Vishay
Manufacturer no.:
     SISS06DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.00115 ohm Product Range TrenchFET Gen IV MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 172.6 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 65.7 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC To Be Advised
Other search terms: SMD transistors, Transistor, Transistors, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISS06DN-T1-GE3, 3019137, 301-9137
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