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VISHAY SISHA10DN-T1-GE3 MOSFET, N-CH, 30V, 30A, POWERPAK 1212-8


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3128848
Manufacturer:
     Vishay
Manufacturer no.:
     SISHA10DN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0028 ohm Product Range TrenchFET MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 30 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 39 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC To Be Advised
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISHA10DN-T1-GE3, 3128848, 312-8848
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6546 Yorkshire LS12
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This item is excluded from cancellation, exchange or return.
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