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VISHAY SQM110P06-8M9L_GE3 MOSFET, P-CH, 60V, 110A, 175DEG C, 230W


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470667
Manufacturer:
     Vishay
Manufacturer no.:
     SQM110P06-8M9L_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0071 ohm Product Range TrenchFET No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 110 A Operating Temperature Max 175 °C Transistor Case Style TO-263 (D2PAK) Drain Source Voltage Vds 60 V Power Dissipation 230 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQM110P06-8M9L_GE3, 3470667, 347-0667
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