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VISHAY SQD50N10-8M9L_GE3 MOSFET, N-CH, 100V, 50A, 175DEG C, 136W


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470676
Manufacturer:
     Vishay
Manufacturer no.:
     SQD50N10-8M9L_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0071 ohm Product Range TrenchFET No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 50 A Operating Temperature Max 175 °C Transistor Case Style TO-252AA Drain Source Voltage Vds 100 V Power Dissipation 136 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQD50N10-8M9L_GE3, 3470676, 347-0676
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