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VISHAY SQJ457EP-T1_GE3 MOSFET, P-CH, 60V, 36A, 175DEG C, 68W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470689
Manufacturer:
     Vishay
Manufacturer no.:
     SQJ457EP-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.021 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 36 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 60 V Power Dissipation 68 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 2 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQJ457EP-T1_GE3, 3470689, 347-0689
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6546 Yorkshire LS12
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