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VISHAY SQJ418EP-T1_GE3 MOSFET, N-CH, 100V, 48A, 175DEG C, 68W


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3470698
Manufacturer:
     Vishay
Manufacturer no.:
     SQJ418EP-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.011 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 48 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK SO Drain Source Voltage Vds 100 V Power Dissipation 68 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 3 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQJ418EP-T1_GE3, 3470698, 347-0698
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