Product range
My Mercateo
Sign in / Register
Basket
 
 

ROHM BSM300D12P2E001 SIC MOSFET, DUAL N CHANNEL, 1.2KV, 300A


Quantity:  piece  
Product information
Product Image
Product Image
Item number:
     6546-3573225
Manufacturer:
     ROHM Semiconductor
Manufacturer no.:
     BSM300D12P2E001
EAN/GTIN:
     n/a
Search terms:
Power transistor
power transistor
Rds(on) Test Voltage - Drain Source On State Resistance - Product Range - No. of Pins - MOSFET Module Configuration Half Bridge Channel Type Dual N Channel Transistor Case Style Module Continuous Drain Current Id 300 A Operating Temperature Max 150 °C Drain Source Voltage Vds 1.2 kV Power Dissipation 1.875 kW Gate Source Threshold Voltage Max 2.7 V SVHC Lead (23-Jan-2024)
Other search terms: (SiC), Carbide, Discretes, FETs, Modules, MOSFETs, Semiconductors, Silicon, ROHM, BSM300D12P2E001, 3573225, 357-3225
Offers (2)
Stock level
Shipping
Staggered price
Unit price
^
6546 Yorkshire LS12
out of stock
Carriage paid
from £ 550.05*
£ 587.46*
Carriage paid
from £ 743.109*
£ 787.529*
Prices: 6546 Yorkshire LS12
Order quantity
Net
Gross
Unit
1 piece
£ 587.46*
£ 704.95
per piece
from 2 pieces
£ 582.85*
£ 699.42
per piece
from 5 pieces
£ 575.02*
£ 690.02
per piece
from 10 pieces
£ 565.28*
£ 678.34
per piece
from 500 pieces
£ 550.05*
£ 660.06
per piece
Stock level: 6546 Yorkshire LS12
Shipping: 6546 Yorkshire LS12
Have more detailed stock level information displayed.
Order value
Shipping
from £ 0.00*
£ 2.00*
from £ 40.00*
Carriage paid
Rights to return this item: 6546 Yorkshire LS12
This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
* Prices with asterisk are net prices excl. statutory VAT.
Our offer is only aimed at companies, public institutions and freelancers.