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VISHAY SIHU2N80AE-GE3 MOSFET, N-CH, 800V, 2.9A, IPAK


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3586073
Manufacturer:
     Vishay
Manufacturer no.:
     SIHU2N80AE-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 2.5 ohm Product Range E MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 2.9 A Operating Temperature Max 150 °C Transistor Case Style TO-251 (IPAK) Drain Source Voltage Vds 800 V Power Dissipation 62.5 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHU2N80AE-GE3, 3586073, 358-6073
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6546 Yorkshire LS12
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