| ![](/p.gif) |
![](/p.gif) |
| Item number: 6546-3677851 Manufacturer no.: SISH536DN-T1-GE3 EAN/GTIN: n/a |
| |
|
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0027 ohm Product Range TrenchFET Gen V MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 67.4 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 26.5 W Qualification - Gate Source Threshold Voltage Max 2.2 V SVHC To Be Advised |
| ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | | ![](/p.gif) | ![](/p.gif) |
![](/p.gif) | Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISH536DN-T1-GE3, 3677851, 367-7851 |
| ![](/p.gif) | ![](/p.gif) |
| |