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| Item number: 6546-3729616 Manufacturer no.: SISH892BDN-T1-GE3 EAN/GTIN: n/a |
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![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0253 ohm Product Range TrenchFET Gen IV No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 20 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 100 V Power Dissipation 29 W Qualification - Gate Source Threshold Voltage Max 2.4 V SVHC Lead (10-Jun-2022) |
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![](/p.gif) | Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISH892BDN-T1-GE3, 3729616, 372-9616 |
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