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VISHAY SI4464DY-T1-GE3 MOSFET, N-CH, 200V, 1.7A, SOIC


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3772756
Manufacturer:
     Vishay
Manufacturer no.:
     SI4464DY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.195 ohm Product Range TrenchFET No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 1.7 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 200 V Power Dissipation 1.5 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC No SVHC (10-Jun-2022)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI4464DY-T1-GE3, 3772756, 377-2756
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£ 0.9708
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