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VISHAY SIR836DP-T1-GE3 MOSFET, N-CH, 40V, 21A, POWERPAK SO


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3772833
Manufacturer:
     Vishay
Manufacturer no.:
     SIR836DP-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.015 ohm Product Range Trench No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Transistor Case Style PowerPAK SO Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Drain Source Voltage Vds 40 V Power Dissipation 15.6 W Qualification - Gate Source Threshold Voltage Max 1.2 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIR836DP-T1-GE3, 3772833, 377-2833
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