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VISHAY SI2301CDS-T1-GE3 MOSFET, P-CH, 20V, 3.1A, TO-236


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3879329
Manufacturer:
     Vishay
Manufacturer no.:
     SI2301CDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 2.5 V Drain Source On State Resistance 0.142 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 3.1 A Operating Temperature Max 150 °C Transistor Case Style TO-236 Drain Source Voltage Vds 20 V Power Dissipation 860 mW Qualification - Gate Source Threshold Voltage Max 400 mV SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI2301CDS-T1-GE3, 3879329, 387-9329
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