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VISHAY SI2307CDS-T1-GE3 MOSFET, P-CH, 30V, 2.7A, TO-236


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3879330
Manufacturer:
     Vishay
Manufacturer no.:
     SI2307CDS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 20 V Drain Source On State Resistance 0.138 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 2.7 A Operating Temperature Max 150 °C Transistor Case Style TO-236 Drain Source Voltage Vds 30 V Power Dissipation 1.1 W Qualification - Gate Source Threshold Voltage Max 3 V SVHC No SVHC (23-Jan-2024)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI2307CDS-T1-GE3, 3879330, 387-9330
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3000
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6546 Yorkshire LS12
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