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VISHAY SI2369DS-T1-GE3 MOSFET, P-CH, 30V, 7.6A, SOT-23


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3879349
Manufacturer:
     Vishay
Manufacturer no.:
     SI2369DS-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.024 ohm Product Range - MSL MSL 1 - Unlimited No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 7.6 A Operating Temperature Max 150 °C Transistor Case Style SOT-23 Drain Source Voltage Vds 30 V Power Dissipation 2.5 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC No SVHC (23-Jan-2024)
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI2369DS-T1-GE3, 3879349, 387-9349
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