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VISHAY SIHG21N65EF-GE3 MOSFET, N-CH, 650V, 21A, TO-247AC


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3929210
Manufacturer:
     Vishay
Manufacturer no.:
     SIHG21N65EF-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.15 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Transistor Case Style TO-247AC Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Drain Source Voltage Vds 650 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHG21N65EF-GE3, 3929210, 392-9210
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