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VISHAY SIHB21N65EF-GE3 MOSFET, N-CH, 650V, 21A, TO-263


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Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3929216
Manufacturer:
     Vishay
Manufacturer no.:
     SIHB21N65EF-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
SMD transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.15 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Transistor Case Style TO-263 (D2PAK) Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Drain Source Voltage Vds 650 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB21N65EF-GE3, 3929216, 392-9216
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