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| Item number: 6546-3929216 Manufacturer no.: SIHB21N65EF-GE3 EAN/GTIN: n/a |
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![](/p.gif) | Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.15 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Surface Mount Channel Type N Channel Transistor Case Style TO-263 (D2PAK) Continuous Drain Current Id 21 A Operating Temperature Max 150 °C Drain Source Voltage Vds 650 V Power Dissipation 208 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised |
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![](/p.gif) | Other search terms: SMD transistors, Transistor, Transistors, smd transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHB21N65EF-GE3, 3929216, 392-9216 |
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