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VISHAY SIHP6N65E-GE3 MOSFET, N-CH, 650V, 7A, TO-220AB


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-3929223
Manufacturer:
     Vishay
Manufacturer no.:
     SIHP6N65E-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.5 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Transistor Case Style TO-220AB Continuous Drain Current Id 7 A Operating Temperature Max 150 °C Drain Source Voltage Vds 650 V Power Dissipation 78 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Transistors, power transistor, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHP6N65E-GE3, 3929223, 392-9223
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6546 Yorkshire LS12
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This item is excluded from cancellation, exchange or return.
The Terms and Conditions state that the warranty period continues regardless of the return rights stated.
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