| |
|
| Item number: 6546-3929229 Manufacturer no.: SIHP28N65EF-GE3 EAN/GTIN: n/a |
| |
|
| | |
| Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.102 ohm Product Range E Series No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 28 A Operating Temperature Max 150 °C Transistor Case Style TO-220AB Drain Source Voltage Vds 650 V Power Dissipation 250 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised |
| | |
| | | |
| Other search terms: Transistors, Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SIHP28N65EF-GE3, 3929229, 392-9229 |
| | |
| |