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VISHAY SISA18BDN-T1-GE3 MOSFET, N-CH, 30V, 60A, POWERPAK 1212


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Item number:
     6546-4006712
Manufacturer:
     Vishay
Manufacturer no.:
     SISA18BDN-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0055 ohm Product Range TrenchFET Gen IV Series MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 60 A Operating Temperature Max 150 °C Transistor Case Style PowerPAK 1212 Drain Source Voltage Vds 30 V Power Dissipation 36.8 W Qualification - Gate Source Threshold Voltage Max 2.4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SISA18BDN-T1-GE3, 4006712, 400-6712
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6546 Yorkshire LS12
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