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VISHAY SI4155DY-T1-GE3 MOSFET, P-CH, 30V, 13.6A, SOIC


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4014702
Manufacturer:
     Vishay
Manufacturer no.:
     SI4155DY-T1-GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0125 ohm Product Range TrenchFET Series MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type P Channel Continuous Drain Current Id 13.6 A Operating Temperature Max 150 °C Transistor Case Style SOIC Drain Source Voltage Vds 30 V Power Dissipation 4.5 W Qualification - Gate Source Threshold Voltage Max 2.5 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SI4155DY-T1-GE3, 4014702, 401-4702
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6546 Yorkshire LS12
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