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VISHAY SQJQ186ER-T1_GE3 MOSFET, N-CH, 80V, 329A, POWERPAK


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Product information
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Item number:
     6546-4014734
Manufacturer:
     Vishay
Manufacturer no.:
     SQJQ186ER-T1_GE3
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.0017 ohm Product Range TrenchFET Gen IV Series MSL MSL 1 - Unlimited No. of Pins 8 Pins Transistor Mounting Surface Mount Channel Type N Channel Continuous Drain Current Id 329 A Operating Temperature Max 175 °C Transistor Case Style PowerPAK Drain Source Voltage Vds 80 V Power Dissipation 600 W Qualification AEC-Q101 Gate Source Threshold Voltage Max 3 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, VISHAY, SQJQ186ER-T1_GE3, 4014734, 401-4734
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6546 Yorkshire LS12
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