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TOSHIBA TK10J80E,S1E(S MOSFET, N-CH, 800V, 10A, TO-3P


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Product information
Detailbild zum Produkt - kann vom Original abweichen
Detailbild zum Produkt - kann vom Original abweichen
Item number:
     6546-4035790
Manufacturer:
     Toshiba
Manufacturer no.:
     TK10J80E,S1E(S
EAN/GTIN:
     n/a
Search terms:
Power transistor
MOSFET
MOSFET transistor
power transistor
Rds(on) Test Voltage 10 V Drain Source On State Resistance 0.7 ohm Product Range - No. of Pins 3 Pins Transistor Mounting Through Hole Channel Type N Channel Continuous Drain Current Id 10 A Operating Temperature Max 150 °C Transistor Case Style TO-3P Drain Source Voltage Vds 800 V Power Dissipation 250 W Qualification - Gate Source Threshold Voltage Max 4 V SVHC To Be Advised
Other search terms: Discretes, FETs, MOSFETs, Semiconductors, Single, TOSHIBA, TK10J80E,S1E(S, 4035790, 403-5790
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